Infineon IPD200N15N3GATMA1: High-Performance 150V OptiMOS Power Transistor for Automotive and Industrial Applications

The Infineon IPD200N15N3GATMA1 represents a significant advancement in power semiconductor technology, delivering exceptional performance and reliability tailored for the demanding environments of automotive and industrial systems. As part of Infineon’s renowned OptiMOS™ power transistor family, this 150V N-channel MOSFET is engineered to meet rigorous industry standards while offering superior efficiency, thermal management, and power density.

Designed specifically for high-frequency switching applications, the IPD200N15N3GATMA1 features an ultra-low on-state resistance (RDS(on)) of just 2.0 mΩ, significantly reducing conduction losses and improving overall system efficiency. This makes it an ideal choice for applications such as DC-DC converters, motor control systems, and solid-state relays, where minimizing energy loss is critical. The device’s advanced trench technology ensures fast switching speeds, enabling higher operating frequencies and contributing to more compact and lightweight designs.

In automotive applications, the transistor excels in electric power steering (EPS), braking systems, and battery management systems (BMS), where reliability under high stress and wide temperature variations is paramount. Its AEC-Q101 qualification guarantees robust performance in harsh automotive environments, ensuring long-term durability and safety. For industrial use, the MOSFET is suited for power supplies, industrial motor drives, and automation equipment, providing high efficiency and thermal stability even under continuous heavy loads.

Thermal performance is another standout feature, with the device housed in a D2PAK (TO-263) package that offers excellent heat dissipation, reducing the need for additional cooling mechanisms. This package also enhances power cycling capability, making it reliable for pulsed load conditions. Additionally, the IPD200N15N3GATMA1 is halogen-free and RoHS compliant, aligning with global environmental standards.

With its combination of low RDS(on), high switching speed, and rugged construction, the Infineon IPD200N15N3GATMA1 sets a new benchmark for power transistors in both automotive and industrial sectors, enabling next-generation applications with higher efficiency and power density.

ICGOODFIND: The Infineon IPD200N15N3GATMA1 OptiMOS™ power transistor stands out for its ultra-low RDS(on), high-frequency capability, and automotive-grade reliability, making it a top choice for efficient and compact power designs.

Keywords:

OptiMOS,

150V MOSFET,

Automotive Grade,

Low RDS(on),

High Efficiency