Infineon BBY56-02W: High-Performance PIN Diode for RF Switching and Attenuation

Release date:2025-10-31 Number of clicks:163

Infineon BBY56-02W: High-Performance PIN Diode for RF Switching and Attenuation

In the demanding world of radio frequency (RF) design, the selection of core components is critical to achieving optimal system performance. The Infineon BBY56-02W stands out as a premier surface-mount (SOD-323) PIN diode engineered specifically for high-frequency applications, offering exceptional characteristics for RF switching and attenuation.

PIN diodes are unique semiconductor devices that function as variable resistors at RF frequencies. Their operation hinges on the manipulation of the conductive "I" (intrinsic) region between the P and N layers. Under zero or reverse bias, the diode presents a high impedance, acting as an open circuit. When forward biased, it presents a very low impedance, effectively creating a short circuit. This fundamental property makes them ideal for controlling RF signals.

The BBY56-02W excels in this role due to its outstanding electrical parameters. It boasts an extremely low series resistance (Rs) of just 0.8 Ω (typical) at a forward current of 10 mA. This minimal resistance is paramount for achieving low insertion loss in series switch configurations, ensuring maximum signal power is transferred when the switch is "on." Complementing this is its remarkably low total capacitance (Ct) of 0.25 pF (typical) at 0 V, 1 MHz. This ultra-low capacitance is the key to achieving high isolation in shunt switch configurations and enables superior performance at very high frequencies, extending into the Ku-band and beyond.

These traits make the BBY56-02W an excellent choice for a wide array of applications. It is perfectly suited for:

High-Speed RF Switching: Its fast switching speed allows for rapid toggling between antenna paths or filter banks in transmit/receive (T/R) modules, cellular infrastructure, and radar systems.

Precision RF Attenuation: When used in a continuously variable attenuator circuit, the diode's linearity and consistent Rs vs. bias current characteristic allow for precise control of signal amplitude.

Phase Shifting and Modulation: Its predictable behavior under bias is essential in designs requiring controlled phase shifts.

Furthermore, the device is housed in a compact and rugged SOD-323 package, making it suitable for automated PCB assembly and robust enough to withstand the rigors of industrial and automotive environments.

ICGOODFIND: The Infineon BBY56-02W is a top-tier component for designers seeking to optimize RF control circuits. Its superior blend of ultra-low series resistance and minimal capacitance provides a performance edge, enabling the creation of switches and attenuators with lower loss and higher isolation, which is essential for next-generation communication systems.

Keywords: PIN Diode, RF Switching, Low Capacitance, Low Series Resistance, RF Attenuation.

Home
TELEPHONE CONSULTATION
Whatsapp
Global Manufacturers Directory