Infineon IPB020N10N5LFATMA1 100V OptiMOS 5 Power MOSFET: Datasheet, Application Circuit, and Thermal Characteristics
The Infineon IPB020N10N5LFATMA1 represents a significant advancement in power MOSFET technology, belonging to the high-performance OptiMOS™ 5 family. This 100V N-channel MOSFET is engineered to deliver exceptional efficiency, robustness, and power density for a wide array of demanding applications, including industrial motor drives, DC-DC converters, and synchronous rectification in switch-mode power supplies (SMPS).
Key Datasheet Parameters and Features
A deep dive into the datasheet reveals the standout characteristics that define this component. The device boasts an ultra-low maximum on-state resistance (RDS(on)) of just 2.0 mΩ at 10 V gate-source voltage. This exceptionally low resistance is the cornerstone of its high-efficiency performance, as it directly minimizes conduction losses. Furthermore, the MOSFET features low total gate charge (Qg) and outstanding switching characteristics, which significantly reduce switching losses. This combination makes it ideal for high-frequency switching applications. The component is housed in a TO-263-7 (D2PAK-7) package, which offers an excellent trade-off between compact size and superior thermal performance, thanks to its additional pins that aid in power dissipation.
Typical Application Circuit: Synchronous Buck Converter
A primary application for the IPB020N10N5LFATMA1 is as the low-side switch in a synchronous buck converter circuit. In this configuration, its low RDS(on) is critical for minimizing power loss during the freewheeling phase of the switching cycle. The high-side switch (often another MOSFET) turns on to charge the inductor, and when it turns off, the low-side IPB020N10N5LFATMA1 switch conducts, providing a path for the inductor current. The efficiency of the entire converter is heavily dependent on the performance of this low-side MOSFET. The fast switching speed and low gate charge of the OptiMOS 5 device ensure clean and rapid transitions, further enhancing overall system efficiency and allowing for higher switching frequencies, which in turn can reduce the size of passive components like inductors and capacitors.
Thermal Characteristics and Management
Effective thermal management is paramount for realizing the full potential of any power MOSFET. The maximum junction temperature (Tj) is rated at 175°C, providing a wide operating margin. The key thermal metrics from the datasheet include:
Junction-to-Case thermal resistance (RthJC): A very low 0.5 K/W.
Junction-to-Ambient thermal resistance (RthJA): 40 K/W (note: this value is highly dependent on the PCB design).
The low RthJC indicates that heat transfers very efficiently from the silicon die to the package case. This underscores the critical importance of attaching a suitable heatsink to the metal tab of the D2PAK-7 package. The thermal performance is also heavily influenced by the PCB design; a large copper area connected to the drain pins acts as an effective heatsink, directly lowering the overall thermal resistance from junction to ambient. Proper cooling ensures the device operates within its safe operating area (SOA), maximizing reliability and longevity.
ICGOODFIND Summary
The Infineon IPB020N10N5LFATMA1 OptiMOS™ 5 100V MOSFET is a top-tier component designed for high-efficiency and high-power-density solutions. Its defining features are an ultra-low 2.0 mΩ RDS(on) and excellent switching performance, which collectively minimize both conduction and switching losses. To fully leverage its capabilities, designers must pay close attention to thermal management, utilizing the package's efficient thermal path to a heatsink or PCB copper pour. It is an optimal choice for advanced power conversion systems where efficiency and reliability are non-negotiable.
Keywords:
1. OptiMOS 5
2. RDS(on)
3. Synchronous Rectification
4. Thermal Resistance
5. Power Efficiency
