Infineon IPB029N06N3G OptiMOS 3 Power MOSFET: Key Features and Applications

The Infineon IPB029N06N3G is a member of the OptiMOS™ 3 family, representing a benchmark in power MOSFET technology designed for high-efficiency and power-dense applications. This N-channel MOSFET is built using advanced silicon technology, offering an optimal balance between low on-state resistance and high switching performance. With a voltage rating of 60 V and a continuous drain current of 70 A, this device is engineered to meet the demanding requirements of modern power systems.

Key Features

One of the most significant attributes of the IPB029N06N3G is its exceptionally low on-state resistance (RDS(on)) of just 2.9 mΩ at 10 V. This ultra-low resistance minimizes conduction losses, which is critical for improving overall system efficiency and reducing heat generation. The device also features low gate charge (QG) and low reverse recovery charge (Qrr), enabling fast switching speeds. This reduces switching losses, making it ideal for high-frequency applications. Furthermore, it is housed in a compact and robust D2PAK (TO-263) package, which offers excellent thermal performance and power dissipation capabilities, allowing for higher power density in design layouts.

Primary Applications

The combination of high current handling, low losses, and robust thermal performance makes the IPB029N06N3G extremely versatile. A primary application is in switched-mode power supplies (SMPS), particularly in server and telecom power units where efficiency is paramount. It is also extensively used in synchronous rectification stages to replace traditional diodes, further boosting efficiency in DC-DC converters.

Another major application is in motor control and driving circuits. This includes robotics, industrial automation, and automotive systems like electric power steering (EPS) and transmission control, where reliable and efficient switching under high current is essential. Additionally, its performance characteristics make it suitable for battery management systems (BMS) and solar inverters, contributing to energy savings and improved power conversion.

ICGOODFIND: The Infineon IPB029N06N3G OptiMOS™ 3 MOSFET stands out for its superior efficiency, driven by an ultra-low RDS(on) and excellent switching characteristics. It is a cornerstone component for designers aiming to achieve high power density and thermal performance in a wide array of industrial, automotive, and computing applications.

Keywords: Power MOSFET, Low RDS(on), Synchronous Rectification, High Efficiency, Switched-Mode Power Supplies (SMPS)