Infineon BSB056N10NN3 100V N-Channel Power MOSFET for High-Efficiency Applications

The demand for high-efficiency power management solutions continues to grow across industries such as automotive systems, industrial motor drives, renewable energy inverters, and advanced computing. At the heart of these systems lies the power switch, a critical component dictating overall performance, thermal behavior, and energy efficiency. The Infineon BSB056N10NN3 100V N-Channel MOSFET stands out as a premier solution engineered to meet these rigorous demands.

Built on Infineon’s advanced proprietary technology, this MOSFET is designed to deliver exceptional switching performance and very low on-state resistance. With a maximum RDS(on) of just 5.6 mΩ, it significantly reduces conduction losses, which is a primary source of heat and energy waste in power circuits. This ultra-low resistance allows for higher current handling—up to 40 A—with minimal voltage drop, making it ideal for high-current applications such as DC-DC converters and motor control systems where efficiency is paramount.

Another key strength of the BSB056N10NN3 is its optimized switching characteristics. The device features low gate charge (Qg) and low output capacitance, which enables faster switching frequencies. This is particularly beneficial in switch-mode power supplies (SMPS) and synchronous rectification stages, where reducing switching losses directly translates to higher system efficiency and the possibility of using smaller passive components, thus saving space and cost.

The MOSFET’s 100V drain-source voltage rating provides a comfortable margin for 48V bus systems commonly found in telecom and data center power equipment, as well as in automotive and battery management systems (BMS), enhancing system reliability and robustness against voltage spikes. The device is housed in a SuperSO8 package, which offers an excellent power-to-size ratio and improved thermal performance compared to standard SO-8 packages. This allows for better heat dissipation, enabling higher power density designs without compromising on thermal management.

Furthermore, the BSB056N10NN3 is characterized by its high reliability and ruggedness, featuring a strong avalanche capability and a wide operational temperature range. These traits ensure long-term performance even in harsh environments.

ICGOOODFIND: The Infineon BSB056N10NN3 is a high-performance power MOSFET that combines ultra-low RDS(on), excellent switching speed, and superior thermal properties in a compact package. It is an optimal choice for designers aiming to push the boundaries of efficiency and power density in modern electronic systems.

Keywords:

Power MOSFET

High Efficiency

Low RDS(on)

SuperSO8 Package

Switching Performance